CÁC BÀI BÁO KHOA HỌC 18:26:18 Ngày 04/08/2020 GMT+7
Copper-related defects in silicon: Electron-paramagnetic-resonance identification

In this paper the observation of two electron-paramagnetic-resonance spectra, both present in p-type silicon samples after doping with silver, is reported. The two centers show a symmetry lower than cubic and have an effective electron spin S = 1/2. In view of the detected hyperfine interaction with nuclear spins I = 3/2, the spectra are shown to be related to a contaminant introduced into the samples during the diffusion process. By analysis of the features of the spectrum and the defect formation, a spectrum of the tetragonal symmetry, labeled Si-NL58, is identified as a copper-copper pair in a negatively charged state. The second spectrum, labeled Si-NL59, is attributed to a complex containing one copper atom.

 Hai P.N., Gregorkiewicz T., Ammerlaan C.A.J., Don D.T.
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