Defects in electron-irradiated 3C SiC were studied by optically detected magnetic resonance (ODMR). In addition to the isotropic L2 center previously reported, an ODMR spectrum labeled L3, with a trigonal symmetry and an effective electron spin S=1, was observed after annealing at ∼750 °C. The g values of the center along and perpendicular to the trigonal axis were determined as g∥=2.0041 and g⊥=2.0040. The anisotropy of the spectrum is accounted for by the spin-spin interaction with a crystal-field splitting value D=4.2×10^-2 cm^-1. From a spectral dependence study of the ODMR signal, the defect is found to be related to a photoluminescence band in the near midgap region. The defect is likely a complex involving a silicon vacancy and another intrinsic defect as suggested from its trigonal symmetry and annealing behavior.

Son N.T., Sorman E., Chen W.M., Hallin C., Kordina O., Monemar B., Janzen E., Lindstrom J.L.

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