Deep level defects and their role in carrier recombination processes in electron-irradiated 3C SiC have been studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR). An isotropic ODMR spectrum, with a g value of 2.0061±0.0002 and an effective electron spin S=1/2, is observed in irradiated 3C SiC films. From the spectral dependence studies of the ODMR signal, the defect is shown to be a deep level center related to a radiation-iduced PL band with a zero-phonon line at 1.121 eV. Due to the competition between different carrier recombination channels, this ODMR spectrum can also be observed as a decrease of any other PL emissions from the sample, indicating its dominant role in recombination processes. © 1996 American Institute of Physics.

Son N.T., Sorman E., Chen W.M., Singh M., Hallin C., Kordina O., Monemar B., Janzen E., Lindstrom J.L.

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