This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t _F)/Cu(1.2)/NiFe(t_p)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 μm×50μm junctions with various thicknesses of free layer (t_F = 4, 8, 10, 12, 16, 26 nm) and pinned layer (t_p = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 μV/(kA/m) is obtained in the spin-valve configuration with t_F = 26 nm and t_p = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments. © 2009 IEEE.

Tu B.D., Cuong L.V., Hung T.Q., Giang D.T.H., Danh T.M., Duc N.H., Kim C.

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Từ khóa : Coherent rotation; Experimental investigations; Ferromagnetic layers; Free layers; Magnetoresistive devices; Pinned layers; Planar Hall effect; Spin-valve configurations; Spin-valve structures; Spintronic; Bioassay; Biochips; Biosensors; Electric currents; Electric resistance; Gyrators; Hall effect; Iridium compounds; Magnetization reversal; Magnetoelectronics; Magnetoresistance; Magnets; Spin dynamics; Tantalum; Magnetic field effects