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The interface characteristics of passivity anodic oxide films on Hg0.8Cd0.2Te by C-V measurements

The electrical properties of the interface between Hg0.8Cd0.2Te (MCT) and its oxide film prepared by anodic oxidation were estimated at 77 K. The surface charge states density Qss, fast surface states density Nss, type of states of passivity anodic oxide films are obtained from capacitance-voltage measurement. The interface between MCT and its anodic oxide film is characterized by a fast surface states density of the order of Nss = 7 × 1010 eV-1 cm-2 near the middle of the bandgap and of Nss = 7 × 1011 eV-1 cm-2 at flat band voltage in accordance with fixed surface charge states density Qss = 2 × 10-8 C cm-2 (for n-type samples). The fixed oxide surface charge states density is positive for both p-type and n-type MCT semiconductors. © 1998 Elsevier Science S.A. All rights reserved.

 Ngoc N.T.B., Nha N.V.
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  Từ khóa : Anodic oxidation; Capacitance measurement; Energy gap; Film preparation; Mercury compounds; Voltage measurement; Mercury cadmium telluride; Passivity anodic oxide; Surface potential; Semiconducting films