CÁC BÀI BÁO KHOA HỌC 01:48:20 Ngày 27/04/2024 GMT+7
Planar Hall bead array counter microchip with NiFe/IrMn bilayers

The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3×3 μ m2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 m/Oe. It was well applied for single Dynabeads® M-280 detection, where one bead can induce a signal change, ΔV∼2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment. © 2008 American Institute of Physics.


 Tu B.D., Hung T.Q., Thanh N.T., Danh T.M., Duc N.H., Kim C.
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  Từ khóa : Electric currents; Galvanomagnetic effects; Hall effect; Magnetic field effects; Magnetic fields; Sensor networks; Sensors; Applied magnetic fields; Bead array counters; Biological agents; Dynabeads; Magnetic beads; Nife/irmn bilayers; Planar Hall effects; Sensing currents; Signal changes; Single sensors; Integrated circuits